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12250 SE5521F FA2004 TA114E 2SC35 1N5938B SPD25 Z119015
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  ^s.mi-conauctoi ^pioaacti, dna. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . c3 5 serie s telephone : (973 ) 376-292 2 (212)227-600 5 fax: (973 ) 376-896 0 525 . ratin g pea k repetitiv e forwar d an d revers e blockin g voltag e (1 ) (t c = -6 5 t o +125c ) c35 u c35 f c35 a c35 g c35 b c35 h c35 c c35 d c35 e c35 m c35 s c35 n symbo l vdr m o r vrr m valu e 2 5 5 0 10 0 15 0 20 0 25 0 30 0 40 0 50 0 60 0 70 0 80 0 uni t volt s maximu m rating s continue d (t j = 126 c unles s otherwis e noted. ) ratin g rm s on-stat e curren t (al l conductio n angles ) pea k non-repetitiv e surg e curren t (on e cycle . 6 0 hz ) circui t fusin g ( t = 1 t o 8. 3 rns ) pea k gat e powe r averag e gat e powe r pea k revers e gat e voltag e operatin g junctio n temperatur e rang e storag e temperatur e rang e symbo l 'tirms ) its m |2 t p g m pgiav i vgr m t j t st g valu e 3 5 22 5 7 5 5 0. 5 5 -6 5 t o +12 5 -6 5 t o -(-15 0 uni t amp s amp s a2 s watt s wat t volt s c c therma l characteristic s characteristi c therma l resistance , junctio n t o cas e symbo l ma x rfiu c i 1- 7 uni t "c/ w n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n j semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s or e curren l befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
electrica l characteristic s (t j = 25 c unles s otherwis e noted. ) characteristi c ?pea k forwar d blockin g curren t (v p = r?e d v d rv i @ t c = + 125c ) c35u.fa g c35 b c35 h c35 c c35 d c35 e c35 m c35 s c35 n (v d = rate d vdr m @ t c = 125c ) ? al l device s pea k revers e blockin g curren t iv r = rate d v rr m @ t c = +125c ) c35u.fa g c35 b c35 h c36 c c35 d c35 e c35 m c35 s c35 n (v p f rate d vrr m @ t c = 125c ) al l device s pea k on-stat a voltag e ht m = 50. 3 a peak , puls e widt h 1 ms . dut y cycl e ? 2% ) gat e trigge r current , continuou s d c . (v d = 1 2 vdc , r l = s o n i (v d = 1 2 vdc , r l = 5 0 n , t c = -65 o gat e trigge r voltage , continuou s d c (v p = 1 2 vdc , r l = s o n , t c = -es- c t o + i25c i


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